Investigation of heterostructure between diamond and iridium on sapphire

A. Samoto, S. Ito, A. Hotta, T. Hasebe, Y. Ando, A. Sawabe, T. Suzuki

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Diamond thin film has outstanding physical and chemical properties. Diamond-on-iridium configurations have been prepared by several methods, such as microwave enhanced plasma CVD, direct currency plasma CVD, and hot filament CVD. In this study, an Ir interlayer was deposited on single crystal sapphires (Al2O3) with A-planes {1120} by an RF magnetron sputtering method after annealing samples. In addition, a diamond thin film was deposited by a microwave enhanced plasma chemical vapor deposition (MPCVD) method using a mixture of hydrogen and methane gases after a bias enhanced nucleation (BEN) procedure. Ir (001) was grown on the A-plane of sapphire by X-ray pole figure measurement. Diamond thin films were synthesized on each Ir/sapphire substrate and characterized by SEM, Raman spectroscopy. D {100} faces were exhibited in substantial areas of diamond films, and a flat D {100} plane was partially obtained. It is considered that diamond thin films on Ir {100} were mainly grown towards the <100> direction and were epitaxially grown in part.

Original languageEnglish
Pages (from-to)1039-1044
Number of pages6
JournalDiamond and Related Materials
Issue number7-10
Publication statusPublished - 2008 Jul


  • Heteroepitaxy
  • Iridium
  • Sapphire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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