Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

K. M. Itoh; T. Kinoshita; W. Walukiewicz; J. W. Beeman; E. E. Haller; J. Muto; J. W. Farmer; V. I. Ozhogin

doi:10.4028/www.scientific.net/msf.258-263.77

Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

K. M. Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer, V. I. Ozhogin

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

Original language	English
Pages (from-to)	77-82
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	PART 1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.77
Publication status	Published - 1997

Keywords

Compensated semiconductors
Ionized impurity scattering
Mobility

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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abstract = "Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.",

keywords = "Compensated semiconductors, Ionized impurity scattering, Mobility",

author = "Itoh, {K. M.} and T. Kinoshita and W. Walukiewicz and Beeman, {J. W.} and Haller, {E. E.} and J. Muto and Farmer, {J. W.} and Ozhogin, {V. I.}",

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language = "English",

volume = "258-263",

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TY - JOUR

T1 - Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

AU - Itoh, K. M.

AU - Kinoshita, T.

AU - Walukiewicz, W.

AU - Beeman, J. W.

AU - Haller, E. E.

AU - Muto, J.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

PY - 1997

Y1 - 1997

N2 - Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

AB - Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

KW - Compensated semiconductors

KW - Ionized impurity scattering

KW - Mobility

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U2 - 10.4028/www.scientific.net/msf.258-263.77

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M3 - Article

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SN - 0255-5476

VL - 258-263

SP - 77

EP - 82

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 1

ER -

Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

Abstract

Keywords

ASJC Scopus subject areas

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