Abstract
No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA=0.35+or-0.02 meV. The authors show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.
Original language | English |
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Article number | 010 |
Pages (from-to) | 1271-1273 |
Number of pages | 3 |
Journal | Semiconductor Science and Technology |
Volume | 7 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1992 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry