Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

K. K. Kohli; Gordon Davies; N. Q. Vinh; D. West; S. K. Estreicher; T. Gregorkiewicz; I. Izeddin; K. M. Itoh

doi:10.1016/j.nimb.2006.10.055

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

K. K. Kohli, Gordon Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

Abstract

Vibrational lifetimes of the asymmetric stretch mode (1136 cm^-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν₁ (613 cm^-1) local vibrational mode in the decay of the ν₃ (1136 cm^-1) mode. Temperature-dependence measurements show the low-energy ν₂ (29 cm^-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν₂ vibration.

Original language	English
Pages (from-to)	200-204
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	253
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2006.10.055
Publication status	Published - 2006 Dec

Keywords

Infrared absorption
Interstitial oxygen
Lifetime
Local modes
Silicon

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2006.10.055

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Kohli, K. K., Davies, G., Vinh, N. Q., West, D., Estreicher, S. K., Gregorkiewicz, T., Izeddin, I., & Itoh, K. M. (2006). Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 253(1-2), 200-204. https://doi.org/10.1016/j.nimb.2006.10.055

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon. / Kohli, K. K.; Davies, Gordon; Vinh, N. Q. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, No. 1-2, 12.2006, p. 200-204.

Research output: Contribution to journal › Article › peer-review

Kohli, KK, Davies, G, Vinh, NQ, West, D, Estreicher, SK, Gregorkiewicz, T, Izeddin, I & Itoh, KM 2006, 'Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 253, no. 1-2, pp. 200-204. https://doi.org/10.1016/j.nimb.2006.10.055

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title = "Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon",

abstract = "Vibrational lifetimes of the asymmetric stretch mode (1136 cm-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm-1) local vibrational mode in the decay of the ν3 (1136 cm-1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.",

keywords = "Infrared absorption, Interstitial oxygen, Lifetime, Local modes, Silicon",

author = "Kohli, {K. K.} and Gordon Davies and Vinh, {N. Q.} and D. West and Estreicher, {S. K.} and T. Gregorkiewicz and I. Izeddin and Itoh, {K. M.}",

note = "Funding Information: We gratefully acknowledge Stichting voor Fundamenteel Onderzoek der Materie (FOM) for beam time and assistance at FELIX. We appreciate the support through the European Community Research Infrastructure Action under the FP6 “Structuring the European Research Area” programme through the initiative for “Integrating Activity on Synchotron and Free Electron Laser Science”, the R.A. Welch Foundation, the National Renewable Energy Laboratory, Texas Tech High Performance Computer Center and P. Pavone.",

year = "2006",

month = dec,

doi = "10.1016/j.nimb.2006.10.055",

language = "English",

volume = "253",

pages = "200--204",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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AU - Kohli, K. K.

AU - Davies, Gordon

AU - Vinh, N. Q.

AU - West, D.

AU - Estreicher, S. K.

AU - Gregorkiewicz, T.

AU - Izeddin, I.

AU - Itoh, K. M.

N1 - Funding Information: We gratefully acknowledge Stichting voor Fundamenteel Onderzoek der Materie (FOM) for beam time and assistance at FELIX. We appreciate the support through the European Community Research Infrastructure Action under the FP6 “Structuring the European Research Area” programme through the initiative for “Integrating Activity on Synchotron and Free Electron Laser Science”, the R.A. Welch Foundation, the National Renewable Energy Laboratory, Texas Tech High Performance Computer Center and P. Pavone.

PY - 2006/12

Y1 - 2006/12

N2 - Vibrational lifetimes of the asymmetric stretch mode (1136 cm-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm-1) local vibrational mode in the decay of the ν3 (1136 cm-1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.

AB - Vibrational lifetimes of the asymmetric stretch mode (1136 cm-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm-1) local vibrational mode in the decay of the ν3 (1136 cm-1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.

KW - Infrared absorption

KW - Interstitial oxygen

KW - Lifetime

KW - Local modes

KW - Silicon

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ER -

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

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