Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi; Masumi Saitoh; Ken Uchida

doi:10.1109/VLSIT.2008.4588569

I_d fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Citations (Scopus)

Abstract

Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO₂ pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI _d/I_d) by the surface holes is smaller in high-κ pFETs, comparing to the SiO₂ pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade I_d. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

Original language	English
Title of host publication	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Pages	78-79
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2008.4588569
Publication status	Published - 2008
Externally published	Yes
Event	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States Duration: 2008 Jun 17 → 2008 Jun 19

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Country/Territory	United States
City	Honolulu, HI
Period	08/6/17 → 08/6/19

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2008.4588569

Cite this

I_d fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. / Kobayashi, Shigeki; Saitoh, Masumi; Uchida, Ken.
2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT. 2008. p. 78-79 4588569 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kobayashi, S, Saitoh, M & Uchida, K 2008, I_d fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. in 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT., 4588569, Digest of Technical Papers - Symposium on VLSI Technology, pp. 78-79, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, Honolulu, HI, United States, 08/6/17. https://doi.org/10.1109/VLSIT.2008.4588569

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