Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

Shogo Ishizuka, Akimasa Yamada, Hajime Shibata, Paul Fons, Keiichiro Sakurai, Koji Matsubara, Shigeru Niki

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

Original languageEnglish
Pages (from-to)792-796
Number of pages5
JournalSolar Energy Materials and Solar Cells
Issue number6-7
Publication statusPublished - 2009 Jun
Externally publishedYes


  • CGS
  • CIGS
  • CIS
  • Cu(In,Ga)Se
  • Se-radical source
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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