TY - JOUR
T1 - Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates
AU - Ohtomo, A.
AU - Kimura, H.
AU - Saito, K.
AU - Makino, T.
AU - Segawa, Y.
AU - Koinuma, H.
AU - Kawasaki, M.
N1 - Funding Information:
This work was supported by Proposal Based Program of NEDO (99S12010) and JSPS Research for the Future Program in the area of Atomic-Scale Surface and Interface Dynamics (RFTF96P00205). A.O. is supported by JSPS Research Fellowship for Young Scientists. T.M. is supported by research fellowship of the Institute of Physical and Chemical Research for the special postdoctoral researchers.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000°C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000°C, an electron mobility as large as 90 cm2/V s was achieved. By annealing in 1 atm of oxygen at 1000°C, thin films having much larger grain size (> 5μm2) and higher mobility (approx. 120 cm2/V s) comparable with those for bulk single crystals could be obtained.
AB - We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000°C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000°C, an electron mobility as large as 90 cm2/V s was achieved. By annealing in 1 atm of oxygen at 1000°C, thin films having much larger grain size (> 5μm2) and higher mobility (approx. 120 cm2/V s) comparable with those for bulk single crystals could be obtained.
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U2 - 10.1016/S0022-0248(00)00093-2
DO - 10.1016/S0022-0248(00)00093-2
M3 - Conference article
AN - SCOPUS:0033691699
SN - 0022-0248
VL - 214
SP - 284
EP - 288
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -