Liquid phase deposition film of tin oxide

Koji Tsukuma, Tomoyuki Akiyama, Hiroaki Imai

Research output: Contribution to journalArticlepeer-review

89 Citations (Scopus)


The thin film of tin oxide was formed in the solution containing 0.005-0.3 mol/1 SnF2. The procedure of film formation was very simple; the solution, in which a substrate is immersed, is maintained above 40°C for tens of hours. In this method, the hydrolysis product of SnF2 deposited as the film on a substrate. As-deposition film included 6-16 mol% fluorine. The chemical component was deduced as SnO2-05xFx, where 0.17 < × < 0.5. The film was modified to pure SnO2 by heating above 300°C. The electrical conductivity was improved to 1.4 × 10-2 Ω cm by heating at 500°C. The model of liquid phase deposition was proposed to extend another oxide film.

Original languageEnglish
Pages (from-to)48-54
Number of pages7
JournalJournal of Non-Crystalline Solids
Issue number1
Publication statusPublished - 1997 Feb

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


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