Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe; Katsuhiko Nishiguchi; Eiichi Kuramochi; Masaya Notomi

doi:10.1364/OE.17.022505

Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Takasumi Tanabe, Katsuhiko Nishiguchi, Eiichi Kuramochi, Masaya Notomi

Research output: Contribution to journal › Article › peer-review

109 Citations (Scopus)

Abstract

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

Original language	English
Pages (from-to)	22505-22513
Number of pages	9
Journal	Optics Express
Volume	17
Issue number	25
DOIs	https://doi.org/10.1364/OE.17.022505
Publication status	Published - 2009 Dec 7
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.",

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AU - Kuramochi, Eiichi

AU - Notomi, Masaya

PY - 2009/12/7

Y1 - 2009/12/7

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AB - We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electrooptic modulation in a silicon chip. GHz operation is demonstrated at a very low (μ W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

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Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity

Abstract

ASJC Scopus subject areas

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