Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

Y. Kusano; H. Saito; L. S. Vlasenko; M. P. Vlasenko; Eiji Ohta; K. M. Itoh

doi:10.1063/1.4938199

Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

Y. Kusano, H. Saito, L. S. Vlasenko, M. P. Vlasenko, Eiji Ohta, K. M. Itoh

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Abstract

Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.

Original language	English
Article number	245703
Journal	Journal of Applied Physics
Volume	118
Issue number	24
DOIs	https://doi.org/10.1063/1.4938199
Publication status	Published - 2015 Dec 28

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon",

abstract = "Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.",

author = "Y. Kusano and H. Saito and Vlasenko, {L. S.} and Vlasenko, {M. P.} and Eiji Ohta and Itoh, {K. M.}",

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T1 - Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

AU - Kusano, Y.

AU - Saito, H.

AU - Vlasenko, L. S.

AU - Vlasenko, M. P.

AU - Ohta, Eiji

AU - Itoh, K. M.

PY - 2015/12/28

Y1 - 2015/12/28

N2 - Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.

AB - Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560 °C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR peaks of the vacancy-oxygen complex (A-center) diminish. The angular dependence study shows that the EPR spectra of KU2 and KU3 resemble that of SL1, the excited triplet (spin S = 1) state of A-centers, but with slightly different g and D-tensors representing lowering in symmetries. Microscopic lattice distortions caused by capturing of extra interstitial oxygen atoms by the A-centers are proposed to be the source of lowering of the symmetries associated with KU2 and KU3.

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Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon

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