Magnetic and electric properties of Sn-oxide/M (M=Fe, Ni, Co) multilayers

K. Matsuyama; K. Nishihata; S. Komatsu; Y. Nozaki

doi:10.1109/20.801019

Magnetic and electric properties of Sn-oxide/M (M=Fe, Ni, Co) multilayers

K. Matsuyama
, K. Nishihata
, S. Komatsu
, Y. Nozaki

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Magnetic and electronic properties of novel semiconductive-oxide/ferromagnet multilayers of Sn-oxide and ferromagnetic metals (Fe, Ni, Co), deposited with a multi-target rf magnetron sputtering system, were studied. Among the studied material systems, Co/Sn-oxide sustains well-defined layer structure and ferromagnetic property for the thinnest thickness of 1 nm. A thermionic CPP transport was observed in [Co(2 nm) /Sn-oxide (4 nm)₁₀, which activation energy was evaluated as 4.4×10^-3 erg from the thermal dependence of conductivity. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields, which confirms spin dependent transport in Sn-oxide thin film. The measured MR change is 0.6 % (δR = 0.8 Ω, R_s=140 Ω) at room temperature.

Original language	English
Pages (from-to)	2901-2903
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	35
Issue number	5 PART 1
DOIs	https://doi.org/10.1109/20.801019
Publication status	Published - 1999
Externally published	Yes

Keywords

Co/sn-oxide multilayer
Current perpendicular to plane
Magnetoresistance
Spin dependent transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.801019

Cite this

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title = "Magnetic and electric properties of Sn-oxide/M (M=Fe, Ni, Co) multilayers",

abstract = "Magnetic and electronic properties of novel semiconductive-oxide/ferromagnet multilayers of Sn-oxide and ferromagnetic metals (Fe, Ni, Co), deposited with a multi-target rf magnetron sputtering system, were studied. Among the studied material systems, Co/Sn-oxide sustains well-defined layer structure and ferromagnetic property for the thinnest thickness of 1 nm. A thermionic CPP transport was observed in [Co(2 nm) /Sn-oxide (4 nm)10, which activation energy was evaluated as 4.4×10-3 erg from the thermal dependence of conductivity. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields, which confirms spin dependent transport in Sn-oxide thin film. The measured MR change is 0.6 \% (δR = 0.8 Ω, Rs=140 Ω) at room temperature.",

keywords = "Co/sn-oxide multilayer, Current perpendicular to plane, Magnetoresistance, Spin dependent transport",

author = "K. Matsuyama and K. Nishihata and S. Komatsu and Y. Nozaki",

year = "1999",

doi = "10.1109/20.801019",

language = "English",

volume = "35",

pages = "2901--2903",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 1",

}

TY - JOUR

T1 - Magnetic and electric properties of Sn-oxide/M (M=Fe, Ni, Co) multilayers

AU - Matsuyama, K.

AU - Nishihata, K.

AU - Komatsu, S.

AU - Nozaki, Y.

PY - 1999

Y1 - 1999

N2 - Magnetic and electronic properties of novel semiconductive-oxide/ferromagnet multilayers of Sn-oxide and ferromagnetic metals (Fe, Ni, Co), deposited with a multi-target rf magnetron sputtering system, were studied. Among the studied material systems, Co/Sn-oxide sustains well-defined layer structure and ferromagnetic property for the thinnest thickness of 1 nm. A thermionic CPP transport was observed in [Co(2 nm) /Sn-oxide (4 nm)10, which activation energy was evaluated as 4.4×10-3 erg from the thermal dependence of conductivity. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields, which confirms spin dependent transport in Sn-oxide thin film. The measured MR change is 0.6 % (δR = 0.8 Ω, Rs=140 Ω) at room temperature.

AB - Magnetic and electronic properties of novel semiconductive-oxide/ferromagnet multilayers of Sn-oxide and ferromagnetic metals (Fe, Ni, Co), deposited with a multi-target rf magnetron sputtering system, were studied. Among the studied material systems, Co/Sn-oxide sustains well-defined layer structure and ferromagnetic property for the thinnest thickness of 1 nm. A thermionic CPP transport was observed in [Co(2 nm) /Sn-oxide (4 nm)10, which activation energy was evaluated as 4.4×10-3 erg from the thermal dependence of conductivity. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields, which confirms spin dependent transport in Sn-oxide thin film. The measured MR change is 0.6 % (δR = 0.8 Ω, Rs=140 Ω) at room temperature.

KW - Co/sn-oxide multilayer

KW - Current perpendicular to plane

KW - Magnetoresistance

KW - Spin dependent transport

UR - https://www.scopus.com/pages/publications/0033184256

UR - https://www.scopus.com/pages/publications/0033184256#tab=citedBy

U2 - 10.1109/20.801019

DO - 10.1109/20.801019

M3 - Article

AN - SCOPUS:0033184256

SN - 0018-9464

VL - 35

SP - 2901

EP - 2903

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 1

ER -

Magnetic and electric properties of Sn-oxide/M (M=Fe, Ni, Co) multilayers

Abstract

Keywords

ASJC Scopus subject areas

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