TY - JOUR
T1 - Magneto-photoluminescence in high magnetic fields from InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses
AU - Uchida, K.
AU - Miura, N.
AU - Sakuma, Y.
AU - Awano, Y.
AU - Futatsugi, T.
AU - Yokoyama, N.
N1 - Funding Information:
A part of this work was performed under the management of FED as a part of MITI R&D program (Quantum Functional Device project) supported by NEDO.
PY - 1998/6/17
Y1 - 1998/6/17
N2 - Novel GaAs/InGaAs/GaAs quantum dot (QD) structures in tetrahedral-shaped recesses formed on a (111)B GaAs substrate are fabricated using metalorganic vapor-phase epitaxy. Magneto-photoluminescence (PL) measurement are performed under pulsed high magnetic fields up to 40 T applied parallel and perpendicular to the growth direction of the QD. The diamagnetic shift of the PL originating from QD are observed. The amount of the shift is less than that of the PL from quantum wells for both configurations, indicating strong zero-dimensional quantum confinement.
AB - Novel GaAs/InGaAs/GaAs quantum dot (QD) structures in tetrahedral-shaped recesses formed on a (111)B GaAs substrate are fabricated using metalorganic vapor-phase epitaxy. Magneto-photoluminescence (PL) measurement are performed under pulsed high magnetic fields up to 40 T applied parallel and perpendicular to the growth direction of the QD. The diamagnetic shift of the PL originating from QD are observed. The amount of the shift is less than that of the PL from quantum wells for both configurations, indicating strong zero-dimensional quantum confinement.
KW - InGaAs/GaAs
KW - Magneto-photoluminescence
KW - Quantum dots
KW - Tetrahedral-shaped recess
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U2 - 10.1016/S0921-4526(98)00108-2
DO - 10.1016/S0921-4526(98)00108-2
M3 - Article
AN - SCOPUS:0032093582
SN - 0921-4526
VL - 249-251
SP - 247
EP - 251
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -