Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials

Hidetake Tanabe; Shunsuke Sakuragi; Tetsuya Sato

doi:10.1063/1.5087407

Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials

Hidetake Tanabe, Shunsuke Sakuragi, Tetsuya Sato

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO _3−x /Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO _3−x substrate.

Original language	English
Article number	052404
Journal	Applied Physics Letters
Volume	114
Issue number	5
DOIs	https://doi.org/10.1063/1.5087407
Publication status	Published - 2019 Feb 4

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5087407

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title = "Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials",

abstract = " The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO 3−x /Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO 3−x substrate.",

author = "Hidetake Tanabe and Shunsuke Sakuragi and Tetsuya Sato",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Nos. 15J00298 and 15H01998. One of the authors (S.S.) also acknowledges a fellowship from the JSPS. Publisher Copyright: {\textcopyright} 2019 Author(s).",

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AU - Sato, Tetsuya

N1 - Funding Information: This work was supported by JSPS KAKENHI Grant Nos. 15J00298 and 15H01998. One of the authors (S.S.) also acknowledges a fellowship from the JSPS. Publisher Copyright: © 2019 Author(s).

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N2 - The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO 3−x /Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO 3−x substrate.

AB - The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO 3−x /Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO 3−x substrate.

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Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials

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