Measurement of the thermal conductivity of nanometer scale thin films by thermoreflectance phenomenon

M. Kuwahara, O. Suzuki, Y. Yamakawa, N. Taketoshi, T. Yagi, P. Fons, T. Fukaya, J. Tominaga, T. Baba

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


We have measured the temperature dependence of thermal conductivity up to several hundred degrees for memory device materials. In the measurement of thermal conductivity, we used a novel technique of nanosecond thermoreflectance measurement spectroscopy (Nano-TheMS) developed by Baba et al. The main advantage of this technique is that it can measure thin films of nanometer-order by easy sample preparation. Using this system with a heat stage, the measurement of thermal conductivities of Ge2Sb2Te5 and ZnS-SiO2, which were selected as representative materials of memory devices, from room temperature to 400 or 500 °C was carried out. All thermal conductivities increased with higher temperature. Using their temperature dependence, optical disk thermal simulation was carried out, and the results were compared with conventional calculated results without the dependence. It was found that the largest difference at maximum temperature was approximately 80 °C. The temperature dependence of thermal properties is essential for realistic temperature simulation.

Original languageEnglish
Pages (from-to)1792-1796
Number of pages5
JournalMicroelectronic Engineering
Issue number5-8
Publication statusPublished - 2007 May
Externally publishedYes


  • Nanometer thin film
  • Optical disk
  • Phase change memory
  • Thermal conductivity
  • Thermoreflectance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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