We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.
|Physical Review B - Condensed Matter and Materials Physics
|Published - 2005 Aug 15
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics