Metal-induced gap states in epitaxial organic-insulator/metal interfaces

Manabu Kiguchi, Ryotaro Arita, Genki Yoshikawa, Yoshiaki Tanida, Susumu Ikeda, Shiro Entani, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki, Hideo Aoki

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

Original languageEnglish
Article number075446
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
Publication statusPublished - 2005 Aug 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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