TY - GEN
T1 - Microscopic imaging of defect density distribution in InGaP and GaN using the decay time of photo-excited carriers
AU - Kamata, S.
AU - Horiuchi, K.
AU - Sato, M.
AU - Kaneko, M.
AU - Takahashi, S.
AU - Kannari, F.
N1 - Publisher Copyright:
© 2004 OSA/FIO 2004
PY - 2004
Y1 - 2004
N2 - With pump-probe laser measurements of transient reflectivity representing the photo-excited carrier lifetime, we obtained two-dimensional images of the defect density distribution for InGaP and GaN. The defect distributions are compared with cathode-luminescence images.
AB - With pump-probe laser measurements of transient reflectivity representing the photo-excited carrier lifetime, we obtained two-dimensional images of the defect density distribution for InGaP and GaN. The defect distributions are compared with cathode-luminescence images.
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M3 - Conference contribution
AN - SCOPUS:85134721932
T3 - Optics InfoBase Conference Papers
BT - Frontiers in Optics, FiO-2004
PB - Optica Publishing Group (formerly OSA)
T2 - Frontiers in Optics, FiO-2004
Y2 - 12 October 2004
ER -