Modeling an IGBT-inverter with neural networks in control environment

K. Gulez, N. Mutoh, F. Harashima, K. Ohnishi

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

IGBT is a very well-known power device used in the most AC motor control applications. It is also a new power device according to the most of the other power electronic ones in the last 10 years with an insulated gate input like that of power MOSFET but with the low on-state resistance of a power bipolar transistor. Also, it is known that the IGBT functions as a bipolar transistor that is supplied based current by the drain of a MOSFET where the source of the MOSFET is shorted to the collector of the bipolar transistor. In this paper, the analytical model of the IGBT explained in the literature to match the drive circuit requirements is used with the neural network model of switching conditions of the inverter at the same time and transient operation of IGBT is considered to model new type of the device to prevent switching harmonics sourced by inverter to the motor according to the low frequency band range (below 100 kHz) on the passing capacitors between gate and collector, gate and emitter, collector and emitter.

Original languageEnglish
Pages1083-1088
Number of pages6
Publication statusPublished - 2001 Jan 1
Event2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) - Pusan, Korea, Republic of
Duration: 2001 Jun 122001 Jun 16

Other

Other2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001)
Country/TerritoryKorea, Republic of
CityPusan
Period01/6/1201/6/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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