TY - GEN
T1 - Modeling of plasmas for dry etching in ULSI technologies
AU - Petrovic, Z. Lj
AU - Sakadzic, S.
AU - Raspopovic, Z. M.
AU - Makabe, T.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - In this paper we give a review of some of the recent results obtained in modeling of radio frequency (RF) plasmas used for plasma processing. Decreasing sizes of structures that are being processed gives rise to topography dependent etching, which poses a problem for designing plasma reactors. In this paper we discuss how some recently derived characteristics of particle transport may be incorporated in models of such plasmas especially having in mind the search for improvement of plasma reactors to avoid topography dependent etching efficiency due to the high aspect ratio of microelectronic device structures.
AB - In this paper we give a review of some of the recent results obtained in modeling of radio frequency (RF) plasmas used for plasma processing. Decreasing sizes of structures that are being processed gives rise to topography dependent etching, which poses a problem for designing plasma reactors. In this paper we discuss how some recently derived characteristics of particle transport may be incorporated in models of such plasmas especially having in mind the search for improvement of plasma reactors to avoid topography dependent etching efficiency due to the high aspect ratio of microelectronic device structures.
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U2 - 10.1109/icmel.2000.838726
DO - 10.1109/icmel.2000.838726
M3 - Conference contribution
AN - SCOPUS:0033297973
SN - 0780352351
SN - 9780780352353
T3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
SP - 433
EP - 436
BT - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PB - IEEE
T2 - 22nd International Conference on Microelectronics (MIEL 2000)
Y2 - 14 May 2000 through 17 May 2000
ER -