Abstract
Relatively new modification methods for densification of sol-gel derived silica films using electronic excitations and water vapor were investigated. Dried silica gel films were found to be densified by vacuum ultraviolet irradiation and He+ ion implantation. The densification is deduced to be ascribed to dehydration and cleavage of the strained bonds through electronic excitations induced by the irradiations. The structure of the irradiated silica films is similar to that of silica glass densified under a high pressure. The exposure to water vapor at 80° -180°C is also effective in densification and dehydration of sol-gel silica films. These methods are expected to be valuable for fabrication of dense silica films at low temperatures. However, the silica films densified by the irradiations and the exposure are suggested to contain a strained network because a subsequent annealing above 300°C induced structural changes through a thermal relaxation.
Original language | English |
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Pages (from-to) | 144-149 |
Number of pages | 6 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3136 |
DOIs | |
Publication status | Published - 1997 Dec 1 |
Event | Sol-Gel Optics IV - San Diego, CA, United States Duration: 1997 Jul 30 → 1997 Aug 1 |
Keywords
- Ion implantation
- Low temperature densification
- Silica gel
- Thin films
- Ultraviolet irradiation
- Water vapor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering