Modification of sol-gel thin films by ion implantation

Hiroshi Hirashima; Kenji Adachi; Hiroaki Imai

doi:10.1117/12.188968

Modification of sol-gel thin films by ion implantation

Hiroshi Hirashima, Kenji Adachi, Hiroaki Imai

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

In order to densify and to improve the physical properties, TiO₂ sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar⁺ or B⁺ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar⁺ implantation. Dehydration and densification of sol-gel films were enhanced by Ar⁺ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B⁺ implantation. However, IR absorption bands attributed to B-0 bond were observed after B⁺ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Original language	English
Pages (from-to)	33-40
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2288
DOIs	https://doi.org/10.1117/12.188968
Publication status	Published - 1994 Oct 13
Event	Sol-Gel Optics III 1994 - San Diego, United States Duration: 1994 Jul 24 → 1994 Jul 29

Keywords

IR absorption
Ion implantation
Refractive index
Sol-gel
Thin film
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.188968

Cite this

@article{e1fe3669adbb4ef7a8d7662df46536bc,

title = "Modification of sol-gel thin films by ion implantation",

abstract = "In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-0 bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.",

keywords = "IR absorption, Ion implantation, Refractive index, Sol-gel, Thin film, TiO",

author = "Hiroshi Hirashima and Kenji Adachi and Hiroaki Imai",

year = "1994",

month = oct,

day = "13",

doi = "10.1117/12.188968",

language = "English",

volume = "2288",

pages = "33--40",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Modification of sol-gel thin films by ion implantation

AU - Hirashima, Hiroshi

AU - Adachi, Kenji

AU - Imai, Hiroaki

PY - 1994/10/13

Y1 - 1994/10/13

N2 - In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-0 bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

AB - In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-0 bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

KW - IR absorption

KW - Ion implantation

KW - Refractive index

KW - Sol-gel

KW - Thin film

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=85076715529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076715529&partnerID=8YFLogxK

U2 - 10.1117/12.188968

DO - 10.1117/12.188968

M3 - Conference article

AN - SCOPUS:85076715529

SN - 0277-786X

VL - 2288

SP - 33

EP - 40

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Sol-Gel Optics III 1994

Y2 - 24 July 1994 through 29 July 1994

ER -

Modification of sol-gel thin films by ion implantation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this