Monte Carlo particle simulation of a GaAs short-channel MESFET

Y. Awano; K. Tomizawa; N. Hashizume; M. Kawashima

doi:10.1049/el:19830014

Monte Carlo particle simulation of a GaAs short-channel MESFET

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of g_m and I_dss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.

Original language	English
Pages (from-to)	20-21
Number of pages	2
Journal	Electronics Letters
Volume	19
Issue number	1
DOIs	https://doi.org/10.1049/el:19830014
Publication status	Published - 1983 Jan 6
Externally published	Yes

Keywords

Field-effect devices
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19830014

Cite this

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AU - Awano, Y.

AU - Tomizawa, K.

AU - Hashizume, N.

AU - Kawashima, M.

PY - 1983/1/6

Y1 - 1983/1/6

N2 - A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.

AB - A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.

KW - Field-effect devices

KW - Semiconductor devices and materials

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Monte Carlo particle simulation of a GaAs short-channel MESFET

Abstract

Keywords

ASJC Scopus subject areas

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