Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode

K. Tomizawa; Y. Awano; N. Hashizume; F. Suzuki

doi:10.1049/el:19820731

Monte Carlo simulation of GaAs submicron n⁺-n-n⁺ diode with GaAlAs heterojunction cathode

K. Tomizawa, Y. Awano, N. Hashizume, F. Suzuki

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga_1-xAl_xAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.

Original language	English
Pages (from-to)	1067-1069
Number of pages	3
Journal	Electronics Letters
Volume	18
DOIs	https://doi.org/10.1049/el:19820731
Publication status	Published - 1982 Dec 9
Externally published	Yes

Keywords

Electron mobility
Monte Carlo methods
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19820731

Cite this

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title = "Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode",

abstract = "A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.",

keywords = "Electron mobility, Monte Carlo methods, Semiconductor devices and materials",

author = "K. Tomizawa and Y. Awano and N. Hashizume and F. Suzuki",

year = "1982",

month = dec,

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doi = "10.1049/el:19820731",

language = "English",

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journal = "Electronics Letters",

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AU - Tomizawa, K.

AU - Awano, Y.

AU - Hashizume, N.

AU - Suzuki, F.

PY - 1982/12/9

Y1 - 1982/12/9

N2 - A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.

AB - A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.

KW - Electron mobility

KW - Monte Carlo methods

KW - Semiconductor devices and materials

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