TY - JOUR
T1 - Multi-back-gate control of carbon nanotube double-quantum dot
AU - Maki, Hideyuki
AU - Mizuno, Tomoyuki
AU - Suzuki, Satoru
AU - Sato, Tetsuya
AU - Kobayashi, Yoshihiro
PY - 2009/4
Y1 - 2009/4
N2 - We have fabricated single-walled carbon nanotube (SWNT) quantum dot device with local multi-back gates, in which a SWNT is not surrounded by an insulator or gate electrodes. The charge states of multi-quantum dots, which are separated by an intrinsic defect of a SWNT, can be independently controlled by applying two local back gates. The charge stability diagram changes depending on the gate voltage range, which changes the interdot coupling between two dots. Furthermore, a honeycomb charge stability diagram corresponding to an intermediately coupled double-quantum dot is also observed.
AB - We have fabricated single-walled carbon nanotube (SWNT) quantum dot device with local multi-back gates, in which a SWNT is not surrounded by an insulator or gate electrodes. The charge states of multi-quantum dots, which are separated by an intrinsic defect of a SWNT, can be independently controlled by applying two local back gates. The charge stability diagram changes depending on the gate voltage range, which changes the interdot coupling between two dots. Furthermore, a honeycomb charge stability diagram corresponding to an intermediately coupled double-quantum dot is also observed.
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U2 - 10.1143/JJAP.48.04C201
DO - 10.1143/JJAP.48.04C201
M3 - Article
AN - SCOPUS:77952467565
SN - 0021-4922
VL - 48
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 PART 2
M1 - 04C201
ER -