N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Kei Noda; Shinji Tanida; Hiroshi Kawabata; Kazumi Matsushige

doi:10.1016/j.synthmet.2009.10.009

N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Kei Noda, Shinji Tanida, Hiroshi Kawabata, Kazumi Matsushige

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO₂ gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10^-2 cm²/(V s) and 0.21 cm²/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO₂ surfaces, and enhance the electron accumulation by applied gate voltages.

Original language	English
Pages (from-to)	83-87
Number of pages	5
Journal	Synthetic Metals
Volume	160
Issue number	1-2
DOIs	https://doi.org/10.1016/j.synthmet.2009.10.009
Publication status	Published - 2010 Jan
Externally published	Yes

Keywords

Ambipolar transport
Electron trap
Gate buffer layer
Organic thin-film transistor
Pentacene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.synthmet.2009.10.009

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title = "N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer",

abstract = "N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.",

keywords = "Ambipolar transport, Electron trap, Gate buffer layer, Organic thin-film transistor, Pentacene",

author = "Kei Noda and Shinji Tanida and Hiroshi Kawabata and Kazumi Matsushige",

note = "Funding Information: This work was partly supported by Global Center of Excellence (G-COE) program of the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2010",

month = jan,

doi = "10.1016/j.synthmet.2009.10.009",

language = "English",

volume = "160",

pages = "83--87",

journal = "Synthetic Metals",

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publisher = "Elsevier BV",

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TY - JOUR

T1 - N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

AU - Noda, Kei

AU - Tanida, Shinji

AU - Kawabata, Hiroshi

AU - Matsushige, Kazumi

N1 - Funding Information: This work was partly supported by Global Center of Excellence (G-COE) program of the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2010/1

Y1 - 2010/1

N2 - N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.

AB - N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 × 10-2 cm2/(V s) and 0.21 cm2/(V s), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages.

KW - Ambipolar transport

KW - Electron trap

KW - Gate buffer layer

KW - Organic thin-film transistor

KW - Pentacene

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DO - 10.1016/j.synthmet.2009.10.009

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VL - 160

SP - 83

EP - 87

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-2

ER -

N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Abstract

Keywords

ASJC Scopus subject areas

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