TY - GEN
T1 - Nano-device simulation from an atomistic view
AU - Mori, N.
AU - Mil'Nikov, G.
AU - Minari, H.
AU - Kamakura, Y.
AU - Zushi, T.
AU - Watanabe, T.
AU - Uematsu, M.
AU - Itoh, K. M.
AU - Uno, S.
AU - Tsuchiya, H.
PY - 2013
Y1 - 2013
N2 - Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.
AB - Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.
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U2 - 10.1109/IEDM.2013.6724564
DO - 10.1109/IEDM.2013.6724564
M3 - Conference contribution
AN - SCOPUS:84894347864
SN - 9781479923076
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 5.1.1-5.1.4
BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013
T2 - 2013 IEEE International Electron Devices Meeting, IEDM 2013
Y2 - 9 December 2013 through 11 December 2013
ER -