Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices

Jan H. Richter; Alexander V. Kolobov; Paul Fons; Xiaomin Wang; Kirill V. Mitrofanov; Junji Tominaga; Hitoshi Osawa; Motohiro Suzuki

doi:10.1557/opl.2013.643

Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices

Jan H. Richter, Alexander V. Kolobov, Paul Fons, Xiaomin Wang, Kirill V. Mitrofanov, Junji Tominaga, Hitoshi Osawa, Motohiro Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the study of single devices of phase-change (Ge ₂Sb₂Te₅) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the device in situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.

Original language	English
Title of host publication	Phase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications
Publisher	Materials Research Society
Pages	1-5
Number of pages	5
ISBN (Print)	9781632661456
DOIs	https://doi.org/10.1557/opl.2013.643
Publication status	Published - 2013
Externally published	Yes
Event	2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1563
ISSN (Print)	0272-9172

Other

Other	2013 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	13/4/1 → 13/4/5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2013.643

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Richter, J. H., Kolobov, A. V., Fons, P., Wang, X., Mitrofanov, K. V., Tominaga, J., Osawa, H., & Suzuki, M. (2013). Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices. In Phase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications (pp. 1-5). (Materials Research Society Symposium Proceedings; Vol. 1563). Materials Research Society. https://doi.org/10.1557/opl.2013.643

Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices. / Richter, Jan H.; Kolobov, Alexander V.; Fons, Paul et al.
Phase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications. Materials Research Society, 2013. p. 1-5 (Materials Research Society Symposium Proceedings; Vol. 1563).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Richter, JH, Kolobov, AV, Fons, P, Wang, X, Mitrofanov, KV, Tominaga, J, Osawa, H & Suzuki, M 2013, Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices. in Phase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications. Materials Research Society Symposium Proceedings, vol. 1563, Materials Research Society, pp. 1-5, 2013 MRS Spring Meeting, San Francisco, CA, United States, 13/4/1. https://doi.org/10.1557/opl.2013.643

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abstract = "We report on the study of single devices of phase-change (Ge 2Sb2Te5) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the device in situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.",

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doi = "10.1557/opl.2013.643",

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AU - Richter, Jan H.

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AU - Tominaga, Junji

AU - Osawa, Hitoshi

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AB - We report on the study of single devices of phase-change (Ge 2Sb2Te5) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the device in situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.

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Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices

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