TY - GEN
T1 - Nanometer resolution XANES imaging of individual PC-RAM devices
AU - Richter, Jan H.
AU - Krbal, Milos
AU - Kolobov, Alexander V.
AU - Fons, Paul
AU - Wang, Xiaomin
AU - Mitrofanov, Kirill V.
AU - Simpson, Robert E.
AU - Tominaga, Junji
AU - Osawa, Hitoshi
AU - Suzuki, Motohiro
N1 - Funding Information:
The authors would like to acknowledge funding by JSPS through the FIRST Program initiated by CSTP. Synchrotron radiation based experiments were carried out under proposal numbers 2011A1628 and 2011B1704 at SPring-8, Japan.
PY - 2012
Y1 - 2012
N2 - We introduce a technique to permit x-ray absorption spectroscopy studies focusing on individual phase-change (Ge2Sb2Te5) memory cells in fully integrated PC-RAM structures. Devices were investigated employing an x-ray nanobeam of only about 300 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell and enabled us to investigate individual devices without interference from non-switching material surrounding the area of interest. By monitoring the fluorescence signals of tungsten and germanium at a photon energy corresponding to the Ge K-edge absorption edge white line position, we were successful in producing 2D area maps of the active cell region, which clearly show the imbedded tungsten heater element and the switched region of the phase change material. Additionally, position dependent changes in the phase change material could be traced by taking an array of XANES spectra at the Ge K-edge on and in the vicinity of individual devices.
AB - We introduce a technique to permit x-ray absorption spectroscopy studies focusing on individual phase-change (Ge2Sb2Te5) memory cells in fully integrated PC-RAM structures. Devices were investigated employing an x-ray nanobeam of only about 300 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell and enabled us to investigate individual devices without interference from non-switching material surrounding the area of interest. By monitoring the fluorescence signals of tungsten and germanium at a photon energy corresponding to the Ge K-edge absorption edge white line position, we were successful in producing 2D area maps of the active cell region, which clearly show the imbedded tungsten heater element and the switched region of the phase change material. Additionally, position dependent changes in the phase change material could be traced by taking an array of XANES spectra at the Ge K-edge on and in the vicinity of individual devices.
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U2 - 10.1557/opl.2012.1271
DO - 10.1557/opl.2012.1271
M3 - Conference contribution
AN - SCOPUS:84879257320
SN - 9781627482394
T3 - Materials Research Society Symposium Proceedings
SP - 26
EP - 30
BT - Phase-Change Materials for Memory and Reconfigurable Electronics Applications
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -