Nanometer resolution XANES imaging of individual PC-RAM devices

Jan H. Richter, Milos Krbal, Alexander V. Kolobov, Paul Fons, Xiaomin Wang, Kirill V. Mitrofanov, Robert E. Simpson, Junji Tominaga, Hitoshi Osawa, Motohiro Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We introduce a technique to permit x-ray absorption spectroscopy studies focusing on individual phase-change (Ge2Sb2Te5) memory cells in fully integrated PC-RAM structures. Devices were investigated employing an x-ray nanobeam of only about 300 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell and enabled us to investigate individual devices without interference from non-switching material surrounding the area of interest. By monitoring the fluorescence signals of tungsten and germanium at a photon energy corresponding to the Ge K-edge absorption edge white line position, we were successful in producing 2D area maps of the active cell region, which clearly show the imbedded tungsten heater element and the switched region of the phase change material. Additionally, position dependent changes in the phase change material could be traced by taking an array of XANES spectra at the Ge K-edge on and in the vicinity of individual devices.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory and Reconfigurable Electronics Applications
Number of pages5
Publication statusPublished - 2012
Externally publishedYes
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2012 Apr 92012 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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