Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

Ryuji Ohba, Shin ichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

    Research output: Contribution to journalConference articlepeer-review

    4 Citations (Scopus)


    We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.

    Original languageEnglish
    Pages (from-to)745-748
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    Publication statusPublished - 2003 Dec 1
    EventIEEE International Electron Devices Meeting - Washington, DC, United States
    Duration: 2003 Dec 82003 Dec 10

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry


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