Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

Ryuji Ohba; Shin ichi Yasuda; Tetsufumi Tanamoto; Ken Uchida; Shinobu Fujita

Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

Ryuji Ohba, Shin ichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.

Original language	English
Pages (from-to)	745-748
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003 Dec 1
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers",

abstract = "We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.",

author = "Ryuji Ohba and Yasuda, {Shin ichi} and Tetsufumi Tanamoto and Ken Uchida and Shinobu Fujita",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "745--748",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

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TY - JOUR

T1 - Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

AU - Ohba, Ryuji

AU - Yasuda, Shin ichi

AU - Tanamoto, Tetsufumi

AU - Uchida, Ken

AU - Fujita, Shinobu

PY - 2003/12/1

Y1 - 2003/12/1

N2 - We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.

AB - We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.

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M3 - Conference article

AN - SCOPUS:0842309732

SN - 0163-1918

SP - 745

EP - 748

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

Abstract

ASJC Scopus subject areas

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