Natural ordering of ZnO1-xSex grown by radical source MBE

K. Iwata; A. Yamada; P. Fons; K. Matsubara; S. Niki

doi:10.1109/MBE.2002.1037855

Natural ordering of ZnO_1-xSe_x grown by radical source MBE

K. Iwata, A. Yamada, P. Fons, K. Matsubara, S. Niki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Technology for growth of ZnO wide bandgap semiconductor crystal has improved greatly using RS (radical source)-MBE. Recently, ZnO is now gathering a great interest for optoelectrical devices applications and the importance of bandgap engineering in ZnO material system is increasing. We have reported a new bandgap engineering technique using bandgap bowing of the ZnO_1-xSe_x anion compound semiconductors. In previous work, the ZnO_1-xSe_x bandgap bowing parameter had been obtained and the difficulty of Se incorporation in ZnO crystal was suggested. We report on the interesting Se incorporation characteristics in ZnO.

Original language	English
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	253-254
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037855
Publication status	Published - 2002
Externally published	Yes
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: 2002 Sept 15 → 2002 Sept 20

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	02/9/15 → 02/9/20

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037855

Cite this

Iwata, K., Yamada, A., Fons, P., Matsubara, K., & Niki, S. (2002). Natural ordering of ZnO_1-xSe_x grown by radical source MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 253-254). Article 1037855 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037855

Natural ordering of ZnO_1-xSe_x grown by radical source MBE. / Iwata, K.; Yamada, A.; Fons, P. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 253-254 1037855 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iwata, K, Yamada, A, Fons, P, Matsubara, K & Niki, S 2002, Natural ordering of ZnO_1-xSe_x grown by radical source MBE. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037855, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 253-254, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 02/9/15. https://doi.org/10.1109/MBE.2002.1037855

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