Abstract
A novel-structured semiconductor photonic device is investigated using a near-field scanning optical microscope. By tailoring the shape of the fiber probe, high transmission and collection efficiencies are successfully achieved. Employing optimized fiber tips, multi-diagnostics of lateral p-n junctions is performed with the AFM operation. Measuring the spatially resolved photoluminescence spectra, we precisely examine the carrier distribution in the transition region of the p-n junctions. Electroluminescence imaging reveals the width and the position of the active region. The slant angle of the p-n interface is determined by applying the multiwavelength near-field photocurrent measurement. We also clarify the mechanism of the mode conversion due to the interaction between the evanescent light on a small aperture and optically dense semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 162-168 |
| Number of pages | 7 |
| Journal | Materials Science and Engineering B |
| Volume | 48 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1997 Aug 1 |
| Externally published | Yes |
Keywords
- Evanescent light
- Lateral p-n junction
- Near-field scanning optical microscope
- Near-field spectroscopy
- Optical fiber probe
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering