Neutral-impurity scattering in isotopically engineered Ge

K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

Original languageEnglish
Pages (from-to)16995-17000
Number of pages6
JournalPhysical Review B
Issue number23
Publication statusPublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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