Neutral-impurity scattering in isotopically engineered Ge

K. M. Itoh; W. Walukiewicz; H. D. Fuchs; J. W. Beeman; E. E. Haller; J. W. Farmer; V. I. Ozhogin

doi:10.1103/PhysRevB.50.16995

Neutral-impurity scattering in isotopically engineered Ge

K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

Original language	English
Pages (from-to)	16995-17000
Number of pages	6
Journal	Physical Review B
Volume	50
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.50.16995
Publication status	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.50.16995

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title = "Neutral-impurity scattering in isotopically engineered Ge",

abstract = "Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.",

author = "Itoh, {K. M.} and W. Walukiewicz and Fuchs, {H. D.} and Beeman, {J. W.} and Haller, {E. E.} and Farmer, {J. W.} and Ozhogin, {V. I.}",

year = "1994",

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AU - Itoh, K. M.

AU - Walukiewicz, W.

AU - Fuchs, H. D.

AU - Beeman, J. W.

AU - Haller, E. E.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

PY - 1994

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AB - Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors.

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Neutral-impurity scattering in isotopically engineered Ge

Abstract

ASJC Scopus subject areas

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