Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

K. Iwata; P. Fons; A. Yamada; K. Matsubara; S. Niki

doi:10.1016/S0022-0248(99)00613-2

Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

K. Iwata, P. Fons, A. Yamada, K. Matsubara, S. Niki

Research output: Contribution to journal › Conference article › peer-review

181 Citations (Scopus)

Abstract

Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O₂ and N₂ via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N₂/O₂ flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N₂/O₂ flow ratio of 10% was found to have a chemical nitrogen concentration of 1×10¹⁹ cm^-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.

Original language	English
Pages (from-to)	526-531
Number of pages	6
Journal	Journal of Crystal Growth
Volume	209
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-0248(99)00613-2
Publication status	Published - 2000 Feb
Externally published	Yes
Event	The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques - Tsukuba, Jpn Duration: 1999 Jul 28 → 1999 Jul 30

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(99)00613-2

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title = "Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE",

abstract = "Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.",

author = "K. Iwata and P. Fons and A. Yamada and K. Matsubara and S. Niki",

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T1 - Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

AU - Iwata, K.

AU - Fons, P.

AU - Yamada, A.

AU - Matsubara, K.

AU - Niki, S.

PY - 2000/2

Y1 - 2000/2

N2 - Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.

AB - Nitrogen-doped ZnO layers were grown on sapphire substrates by radical source molecular beam epitaxy by simultaneously introducing O2 and N2 via a RF radical source. Reflection high-energy electron diffraction and X-ray diffraction measurements revealed that high N2/O2 flow ratios induced growth twins into the ZnO layer. A nitrogen-doped ZnO fabricated using a N2/O2 flow ratio of 10% was found to have a chemical nitrogen concentration of 1×1019 cm-3. However, type conversion from n-type to p-type did not occur while large nitrogen incorporation was observed to induce extended defects.

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DO - 10.1016/S0022-0248(99)00613-2

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AN - SCOPUS:0034140970

SN - 0022-0248

VL - 209

SP - 526

EP - 531

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

T2 - The 7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques

Y2 - 28 July 1999 through 30 July 1999

ER -

Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE

Abstract

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