Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

Kazuki Ito; Hiroshi Saito; Kento Sasaki; Hideyuki Watanabe; Tokuyuki Teraji; Kohei M. Itoh; Eisuke Abe

doi:10.1063/1.4984060

Nitrogen-vacancy centers created by N⁺ ion implantation through screening SiO₂ layers on diamond

Kazuki Ito, Hiroshi Saito, Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Kohei M. Itoh, Eisuke Abe

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Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on an ion implantation technique utilizing a screening mask made of SiO₂ to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 10¹¹ cm² and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

Original language	English
Article number	213105
Journal	Applied Physics Letters
Volume	110
Issue number	21
DOIs	https://doi.org/10.1063/1.4984060
Publication status	Published - 2017 May 22

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4984060

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@article{3cd2621c00e448918c6d9c6f89b0c958,

title = "Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond",

abstract = "We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.",

author = "Kazuki Ito and Hiroshi Saito and Kento Sasaki and Hideyuki Watanabe and Tokuyuki Teraji and Itoh, {Kohei M.} and Eisuke Abe",

note = "Funding Information: We thank H. Sumiya for supplying the diamond substrate. H.W. acknowledges support from JSPS Grant-in-Aid for Scientific Research (KAKENHI) (A) No. 26249108 and JST Development of Systems and Technologies for Advanced Measurement and Analysis (SENTAN). T.T. acknowledges support from KAKENHI (B) No. 15H03980. K.M.I. acknowledges support from KAKENHI (S) No. 26220602, JSPS Core-to-Core Program, and Spintronics Research Network of Japan (Spin-RNJ). Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = may,

day = "22",

doi = "10.1063/1.4984060",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

AU - Ito, Kazuki

AU - Saito, Hiroshi

AU - Sasaki, Kento

AU - Watanabe, Hideyuki

AU - Teraji, Tokuyuki

AU - Itoh, Kohei M.

AU - Abe, Eisuke

N1 - Funding Information: We thank H. Sumiya for supplying the diamond substrate. H.W. acknowledges support from JSPS Grant-in-Aid for Scientific Research (KAKENHI) (A) No. 26249108 and JST Development of Systems and Technologies for Advanced Measurement and Analysis (SENTAN). T.T. acknowledges support from KAKENHI (B) No. 15H03980. K.M.I. acknowledges support from KAKENHI (S) No. 26220602, JSPS Core-to-Core Program, and Spintronics Research Network of Japan (Spin-RNJ). Publisher Copyright: © 2017 Author(s).

PY - 2017/5/22

Y1 - 2017/5/22

N2 - We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

AB - We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

UR - http://www.scopus.com/inward/record.url?scp=85019695339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019695339&partnerID=8YFLogxK

U2 - 10.1063/1.4984060

DO - 10.1063/1.4984060

M3 - Article

AN - SCOPUS:85019695339

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213105

ER -

Nitrogen-vacancy centers created by N⁺ ion implantation through screening SiO₂ layers on diamond

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