Non-volatile Si quantum memory with self-aligned doubly-stacked dots

R. Ohba; N. Sugiyama; K. Uchida; J. Koga; A. Toriumi

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

R. Ohba, N. Sugiyama, K. Uchida, J. Koga, A. Toriumi

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigate a novel Si quantum memory, in which floating gates are self-aligned doubly stacked Si dots. It is experimentally shown that the self-aligned double dot memory shows excellent charge retention. The retention improvement is explained by a theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot. It is also shown that charge retention is improved remarkably by lower dot size scaling without losing high-speed write/erase.

Original language	English
Pages (from-to)	313-316
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2000 Dec 1
Event	2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 2000 Dec 10 → 2000 Dec 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{6acb97e6795f4be5b94f357eac76af98,

title = "Non-volatile Si quantum memory with self-aligned doubly-stacked dots",

abstract = "We investigate a novel Si quantum memory, in which floating gates are self-aligned doubly stacked Si dots. It is experimentally shown that the self-aligned double dot memory shows excellent charge retention. The retention improvement is explained by a theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot. It is also shown that charge retention is improved remarkably by lower dot size scaling without losing high-speed write/erase.",

author = "R. Ohba and N. Sugiyama and K. Uchida and J. Koga and A. Toriumi",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "313--316",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE International Electron Devices Meeting ; Conference date: 10-12-2000 Through 13-12-2000",

}

TY - JOUR

T1 - Non-volatile Si quantum memory with self-aligned doubly-stacked dots

AU - Ohba, R.

AU - Sugiyama, N.

AU - Uchida, K.

AU - Koga, J.

AU - Toriumi, A.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We investigate a novel Si quantum memory, in which floating gates are self-aligned doubly stacked Si dots. It is experimentally shown that the self-aligned double dot memory shows excellent charge retention. The retention improvement is explained by a theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot. It is also shown that charge retention is improved remarkably by lower dot size scaling without losing high-speed write/erase.

AB - We investigate a novel Si quantum memory, in which floating gates are self-aligned doubly stacked Si dots. It is experimentally shown that the self-aligned double dot memory shows excellent charge retention. The retention improvement is explained by a theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot. It is also shown that charge retention is improved remarkably by lower dot size scaling without losing high-speed write/erase.

UR - http://www.scopus.com/inward/record.url?scp=0034453497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034453497&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034453497

SN - 0163-1918

SP - 313

EP - 316

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2000 IEEE International Electron Devices Meeting

Y2 - 10 December 2000 through 13 December 2000

ER -

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

Abstract

ASJC Scopus subject areas

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