TY - GEN
T1 - Nonvolatile solid-electrolyte switch embedded into Cu interconnect
AU - Sakamoto, T.
AU - Tada, M.
AU - Banno, N.
AU - Tsuji, Y.
AU - Saitoh, Y.
AU - Yabe, Y.
AU - Hada, H.
AU - Iguchi, N.
AU - Aono, M.
PY - 2009
Y1 - 2009
N2 - A solid-electrolyte switch ("NanoBridge") has been successfully embedded into a 0.13-μm-node dual-damascene Cu interconnect using a highly reliable bilayer solidelectrolyte (TaSiO/Ta2O5) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (< 109) at a low ON resistance of 50Ω. The newly developed bilayer solid-electrolyte has improved the thermal stability during the BEOL process as well as improved electrical breakdown. The CMOS compatible NanoBridge is a promising switch to achieve high-performance and low-cost programmable LSIs.
AB - A solid-electrolyte switch ("NanoBridge") has been successfully embedded into a 0.13-μm-node dual-damascene Cu interconnect using a highly reliable bilayer solidelectrolyte (TaSiO/Ta2O5) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (< 109) at a low ON resistance of 50Ω. The newly developed bilayer solid-electrolyte has improved the thermal stability during the BEOL process as well as improved electrical breakdown. The CMOS compatible NanoBridge is a promising switch to achieve high-performance and low-cost programmable LSIs.
UR - https://www.scopus.com/pages/publications/71049181881
UR - https://www.scopus.com/pages/publications/71049181881#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:71049181881
SN - 9784863480094
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 130
EP - 131
BT - 2009 Symposium on VLSI Technology, VLSIT 2009
T2 - 2009 Symposium on VLSI Technology, VLSIT 2009
Y2 - 16 June 2009 through 18 June 2009
ER -