Numerical simulation of the effect of Cs volume reaction in an [formula omitted] ion source

M. Ogasawara; T. Morishita; M. Miura; N. Shibayama; A. Hatayama

doi:10.1063/1.1148646

Numerical simulation of the effect of Cs volume reaction in an [formula omitted] ion source

M. Ogasawara, T. Morishita, M. Miura, N. Shibayama, A. Hatayama

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Effects of cesium related reactions are investigated using a simulation code for [formula omitted] ion sources. Effects begin to appear when cesium density is [formula omitted] but are still small and become large when the cesium density is greater than [formula omitted] The [formula omitted] density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller [formula omitted] density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around [formula omitted] For cesium density greater than [formula omitted] the effect of the cesium related volume reaction becomes larger.

Original language	English
Pages (from-to)	1132-1134
Number of pages	3
Journal	Review of Scientific Instruments
Volume	69
Issue number	2
DOIs	https://doi.org/10.1063/1.1148646
Publication status	Published - 1998 Feb
Externally published	Yes

ASJC Scopus subject areas

Instrumentation

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10.1063/1.1148646

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abstract = "Effects of cesium related reactions are investigated using a simulation code for [formula omitted] ion sources. Effects begin to appear when cesium density is [formula omitted] but are still small and become large when the cesium density is greater than [formula omitted] The [formula omitted] density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller [formula omitted] density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around [formula omitted] For cesium density greater than [formula omitted] the effect of the cesium related volume reaction becomes larger.",

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AU - Ogasawara, M.

AU - Morishita, T.

AU - Miura, M.

AU - Shibayama, N.

AU - Hatayama, A.

PY - 1998/2

Y1 - 1998/2

N2 - Effects of cesium related reactions are investigated using a simulation code for [formula omitted] ion sources. Effects begin to appear when cesium density is [formula omitted] but are still small and become large when the cesium density is greater than [formula omitted] The [formula omitted] density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller [formula omitted] density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around [formula omitted] For cesium density greater than [formula omitted] the effect of the cesium related volume reaction becomes larger.

AB - Effects of cesium related reactions are investigated using a simulation code for [formula omitted] ion sources. Effects begin to appear when cesium density is [formula omitted] but are still small and become large when the cesium density is greater than [formula omitted] The [formula omitted] density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller [formula omitted] density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around [formula omitted] For cesium density greater than [formula omitted] the effect of the cesium related volume reaction becomes larger.

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Numerical simulation of the effect of Cs volume reaction in an [formula omitted] ion source

Abstract

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