TY - JOUR
T1 - Numerical studies of transport properties through artificial atoms and molecules
AU - Eto, Mikio
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid from the Ministry of Education, Science, Sports and Culture, Japan. The computation was performed using the facilities of the Supercomputer Center, Institute for Solid State Physics, University of Tokyo.
PY - 1998
Y1 - 1998
N2 - Transport properties are studied numerically through a quantum dot in which one-electron level spacings are comparable with the Coulomb interaction energy. Many-body ground state and excited states are obtained by the exact diagonalization method. An atomic-like shell structure of energy levels is reflected in peak positions of the Coulomb oscillation, whereas almost degenerate levels in a shell cause anomalous temperature dependence of some peak heights. When such artificial atoms are coupled like a molecule, the electronic correlation makes the Heitler-London wavefunction in which electrons are localized to be apart from each other. This correlation effect influences the peak heights of the Coulomb oscillation through the artificial molecule.
AB - Transport properties are studied numerically through a quantum dot in which one-electron level spacings are comparable with the Coulomb interaction energy. Many-body ground state and excited states are obtained by the exact diagonalization method. An atomic-like shell structure of energy levels is reflected in peak positions of the Coulomb oscillation, whereas almost degenerate levels in a shell cause anomalous temperature dependence of some peak heights. When such artificial atoms are coupled like a molecule, the electronic correlation makes the Heitler-London wavefunction in which electrons are localized to be apart from each other. This correlation effect influences the peak heights of the Coulomb oscillation through the artificial molecule.
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U2 - 10.1016/S0038-1101(98)00033-1
DO - 10.1016/S0038-1101(98)00033-1
M3 - Article
AN - SCOPUS:0032116489
SN - 0038-1101
VL - 42
SP - 1373
EP - 1377
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7-8
ER -