Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Hiroshi Watanabe; Ken Uchida; Atsuhiro Kinoshita

doi:10.1109/TED.2006.887053

Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Hiroshi Watanabe
, Ken Uchida
, Atsuhiro Kinoshita

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n⁺poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

Original language	English
Pages (from-to)	52-58
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	1
DOIs	https://doi.org/10.1109/TED.2006.887053
Publication status	Published - 2007 Jan
Externally published	Yes

Keywords

Confinement
Double-gate
MOS devices
Silicon-on-insulator (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2006.887053

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author = "Hiroshi Watanabe and Ken Uchida and Atsuhiro Kinoshita",

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AU - Watanabe, Hiroshi

AU - Uchida, Ken

AU - Kinoshita, Atsuhiro

PY - 2007/1

Y1 - 2007/1

N2 - Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

AB - Capacitance-voltage (C-V) characteristics of double-gate ultrathin silicon-on-insulator (SOI) MOSFETs are numerically investigated in detail. The measured back-gate bias dependence is reproduced by the Poisson-Schrödinger solver including the highly precise physical models for many-body interactions of carrier-carrier and carrier-ion, and for incomplete ionization of doping impurities in whole semiconductor regions of n+poly-Si/oxide/SOI/oxide/p-Si capacitor including the volume inversion. In addition, we study the higher subband effect at higher temperature in detail, in order to deduce the impacts of self-heating and nonstatic transport.

KW - Confinement

KW - Double-gate

KW - MOS devices

KW - Silicon-on-insulator (SOI)

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JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Numerical study of C-V characteristics of double-gate ultrathin SOI MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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