Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

M. Myronov; K. Sawano; Y. Shiraki; T. Mouri; K. M. Itoh

doi:10.1016/j.physe.2007.08.142

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm² V^-1 s^-1 is obtained at extremely high density of 4.1×10¹² cm^-2 in the modulation doped (MOD), 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Obtained 2DHG mobility is higher and the carrier density is about eight times larger than those ever reported for SiGe MOD heterostructures. It is also noted that obtained values are not only the highest ones among 2DHG in the strained Ge QW but also larger than those of two-dimensional electron gas in the strained Si QW.

Original language	English
Pages (from-to)	1935-1937
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/j.physe.2007.08.142
Publication status	Published - 2008 Apr

Keywords

2DHG
Carrier density
Ge quantum well
MBE
Mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2007.08.142

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@article{f2392a2bacbf4801b5449e5bc061aa43,

title = "Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature",

abstract = "Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V-1 s-1 is obtained at extremely high density of 4.1×1012 cm-2 in the modulation doped (MOD), 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Obtained 2DHG mobility is higher and the carrier density is about eight times larger than those ever reported for SiGe MOD heterostructures. It is also noted that obtained values are not only the highest ones among 2DHG in the strained Ge QW but also larger than those of two-dimensional electron gas in the strained Si QW.",

keywords = "2DHG, Carrier density, Ge quantum well, MBE, Mobility",

author = "M. Myronov and K. Sawano and Y. Shiraki and T. Mouri and Itoh, {K. M.}",

note = "Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT, 2002–2007, JSPS funding for young researchers #18760019, in part by Grant-in-Aid for Scientific Research by MEXT, Specially Promoted Research #18001002 and in part by Special Coordination Funds for Promoting Science and Technology.",

year = "2008",

month = apr,

doi = "10.1016/j.physe.2007.08.142",

language = "English",

volume = "40",

pages = "1935--1937",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

AU - Myronov, M.

AU - Sawano, K.

AU - Shiraki, Y.

AU - Mouri, T.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported by “High-Tech Research Center” Project for Private Universities: matching fund subsidy from MEXT, 2002–2007, JSPS funding for young researchers #18760019, in part by Grant-in-Aid for Scientific Research by MEXT, Specially Promoted Research #18001002 and in part by Special Coordination Funds for Promoting Science and Technology.

PY - 2008/4

Y1 - 2008/4

N2 - Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V-1 s-1 is obtained at extremely high density of 4.1×1012 cm-2 in the modulation doped (MOD), 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Obtained 2DHG mobility is higher and the carrier density is about eight times larger than those ever reported for SiGe MOD heterostructures. It is also noted that obtained values are not only the highest ones among 2DHG in the strained Ge QW but also larger than those of two-dimensional electron gas in the strained Si QW.

AB - Very high two-dimensional hole gas (2DHG) drift mobility of 3100 cm2 V-1 s-1 is obtained at extremely high density of 4.1×1012 cm-2 in the modulation doped (MOD), 20 nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Obtained 2DHG mobility is higher and the carrier density is about eight times larger than those ever reported for SiGe MOD heterostructures. It is also noted that obtained values are not only the highest ones among 2DHG in the strained Ge QW but also larger than those of two-dimensional electron gas in the strained Si QW.

KW - 2DHG

KW - Carrier density

KW - Ge quantum well

KW - MBE

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=41349113779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41349113779&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2007.08.142

DO - 10.1016/j.physe.2007.08.142

M3 - Article

AN - SCOPUS:41349113779

SN - 1386-9477

VL - 40

SP - 1935

EP - 1937

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 6

ER -

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

Abstract

Keywords

ASJC Scopus subject areas

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