Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties

Ralf Hunger; Paul Fons; Kakuya Iwata; Akimasa Yamada; Koji Matsubara; Shigeru Niki; Ken Nakahara; Hidemi Takasu

doi:10.1557/proc-668-h8.21

Observation of interdiffusion in ZnO/CuInSe₂ heterostructures and its effect on film properties

Ralf Hunger, Paul Fons, Kakuya Iwata, Akimasa Yamada, Koji Matsubara, Shigeru Niki, Ken Nakahara, Hidemi Takasu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

ZnO films were grown directly on epitaxial CuInSe₂ (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

Original language	English
Pages (from-to)	H8211-H8216
Journal	Materials Research Society Symposium - Proceedings
Volume	668
DOIs	https://doi.org/10.1557/proc-668-h8.21
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties",

abstract = "ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.",

author = "Ralf Hunger and Paul Fons and Kakuya Iwata and Akimasa Yamada and Koji Matsubara and Shigeru Niki and Ken Nakahara and Hidemi Takasu",

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doi = "10.1557/proc-668-h8.21",

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T1 - Observation of interdiffusion in ZnO/CuInSe2 heterostructures and its effect on film properties

AU - Hunger, Ralf

AU - Fons, Paul

AU - Iwata, Kakuya

AU - Yamada, Akimasa

AU - Matsubara, Koji

AU - Niki, Shigeru

AU - Nakahara, Ken

AU - Takasu, Hidemi

PY - 2001

Y1 - 2001

N2 - ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

AB - ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

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DO - 10.1557/proc-668-h8.21

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Observation of interdiffusion in ZnO/CuInSe₂ heterostructures and its effect on film properties

Abstract

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