Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a strained Ge quantum well

Maksym Myronov; Kentarou Sawano; Kohei M. Itoh; Yasuhiro Shiraki

doi:10.1143/APEX.1.051402

Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a strained Ge quantum well

Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, Yasuhiro Shiraki

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

Abstract

Strong effect of compressive strain on room-temperature transport properties of two-dimensional hole gas (2DHG) confined in a strained Ge quantum well (QW) of SiGe heterostructures was observed. By increasing compressive strain in the Ge QW the pronounced increase of 2DHG gas density and conductivity were obtained in the full range of researched strain variation. At the same time the increase of 2DHG drift mobility was observed until a certain high strain in the Ge QW, but showed slight reduction under higher strain. Nevertheless the monotonous enhancement of 2DHG conductivity was observed.

Original language	English
Pages (from-to)	514021-514023
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	5
DOIs	https://doi.org/10.1143/APEX.1.051402
Publication status	Published - 2008 May

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Strong effect of compressive strain on room-temperature transport properties of two-dimensional hole gas (2DHG) confined in a strained Ge quantum well (QW) of SiGe heterostructures was observed. By increasing compressive strain in the Ge QW the pronounced increase of 2DHG gas density and conductivity were obtained in the full range of researched strain variation. At the same time the increase of 2DHG drift mobility was observed until a certain high strain in the Ge QW, but showed slight reduction under higher strain. Nevertheless the monotonous enhancement of 2DHG conductivity was observed.",

author = "Maksym Myronov and Kentarou Sawano and Itoh, {Kohei M.} and Yasuhiro Shiraki",

year = "2008",

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AU - Itoh, Kohei M.

AU - Shiraki, Yasuhiro

PY - 2008/5

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N2 - Strong effect of compressive strain on room-temperature transport properties of two-dimensional hole gas (2DHG) confined in a strained Ge quantum well (QW) of SiGe heterostructures was observed. By increasing compressive strain in the Ge QW the pronounced increase of 2DHG gas density and conductivity were obtained in the full range of researched strain variation. At the same time the increase of 2DHG drift mobility was observed until a certain high strain in the Ge QW, but showed slight reduction under higher strain. Nevertheless the monotonous enhancement of 2DHG conductivity was observed.

AB - Strong effect of compressive strain on room-temperature transport properties of two-dimensional hole gas (2DHG) confined in a strained Ge quantum well (QW) of SiGe heterostructures was observed. By increasing compressive strain in the Ge QW the pronounced increase of 2DHG gas density and conductivity were obtained in the full range of researched strain variation. At the same time the increase of 2DHG drift mobility was observed until a certain high strain in the Ge QW, but showed slight reduction under higher strain. Nevertheless the monotonous enhancement of 2DHG conductivity was observed.

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Observation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a strained Ge quantum well

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