TY - JOUR
T1 - Observation of the random-to-correlated transition of the ionized-impurity distribution in compensated semiconductors
AU - Kato, Jiro
AU - Itoh, Kohei M.
AU - Haller, Eugene E.
PY - 2002
Y1 - 2002
N2 - We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
AB - We discuss the broadening of ground state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible a unique determination of the ionized-impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized-impurity distribution as a function of the ionized-impurity concentration and of temperature.
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U2 - 10.1103/PhysRevB.65.241201
DO - 10.1103/PhysRevB.65.241201
M3 - Article
AN - SCOPUS:85038319847
SN - 1098-0121
VL - 65
SP - 1
EP - 4
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 24
ER -