On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

Y. M. Weng; E. Ohta; M. Sakata

doi:10.1063/1.343133

On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

Y. M. Weng, E. Ohta, M. Sakata

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10 Citations (Scopus)

Abstract

The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level E_a (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

Original language	English
Pages (from-to)	515-518
Number of pages	4
Journal	Journal of Applied Physics
Volume	65
Issue number	2
DOIs	https://doi.org/10.1063/1.343133
Publication status	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.343133

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title = "On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection",

abstract = "The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).",

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journal = "Journal of Applied Physics",

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T1 - On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

AU - Weng, Y. M.

AU - Ohta, E.

AU - Sakata, M.

PY - 1989

Y1 - 1989

N2 - The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

AB - The interaction of platinum (Pt) with electron irradiation-induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially the A center, and lowers the annealing temperature to 220°C for the A center and to 140°C for the divacancy and E center. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center. A method is suggested for activating the platinum in silicon with low-energy electron irradiation and subsequent thermal annealing and detecting it by deep level transient spectroscopy (DLTS).

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

On the behavior of interaction of a Pt-related center with radiation-induced defects and the trace platinum detection

Abstract

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