Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

C. C. Du; T. C. Wei; C. H. Chang; S. L. Lee; M. W. Liang; J. R. Huang; C. H. Wu; A. Shirakura; R. Morisawa; T. Suzuki

doi:10.1016/j.tsf.2011.08.110

Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

C. C. Du, T. C. Wei, C. H. Chang, S. L. Lee, M. W. Liang, J. R. Huang, C. H. Wu, A. Shirakura, R. Morisawa, T. Suzuki

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

Original language	English
Pages (from-to)	3999-4002
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2011.08.110
Publication status	Published - 2012 Mar 30

Keywords

Microcrystalline silicon thin film
Optical emission spectroscopy
Process control
Tandem solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.08.110

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title = "Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films",

abstract = "The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.",

keywords = "Microcrystalline silicon thin film, Optical emission spectroscopy, Process control, Tandem solar cell",

author = "Du, {C. C.} and Wei, {T. C.} and Chang, {C. H.} and Lee, {S. L.} and Liang, {M. W.} and Huang, {J. R.} and Wu, {C. H.} and A. Shirakura and R. Morisawa and T. Suzuki",

note = "Funding Information: This research was supported by the grant from the Bureau of Energy of the Ministry of Economic Affairs of Taiwan .",

year = "2012",

month = mar,

day = "30",

doi = "10.1016/j.tsf.2011.08.110",

language = "English",

volume = "520",

pages = "3999--4002",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

AU - Du, C. C.

AU - Wei, T. C.

AU - Chang, C. H.

AU - Lee, S. L.

AU - Liang, M. W.

AU - Huang, J. R.

AU - Wu, C. H.

AU - Shirakura, A.

AU - Morisawa, R.

AU - Suzuki, T.

N1 - Funding Information: This research was supported by the grant from the Bureau of Energy of the Ministry of Economic Affairs of Taiwan .

PY - 2012/3/30

Y1 - 2012/3/30

N2 - The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

AB - The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

KW - Microcrystalline silicon thin film

KW - Optical emission spectroscopy

KW - Process control

KW - Tandem solar cell

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Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

Abstract

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