Optical properties of site-controlled InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition

Jun Tatebayash, Yasutomo Ota, Satomi Ishida, Masao Nishioka, Satoshi Iwamoto, Yasuhiko Arakawa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We report the optical properties of site-controlled InGaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) grown by selective metalorganic chemical vapor deposition (MOCVD). InGaAs/GaAs QD-in-NWs with various QD heights and In compositions are realized on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures, and identified by structural analyses using scanning transmission electron microscopy, photoluminescence (PL) characterization, and numerical analyses of the band structure using a single-band effective mass approximation. Room temperature (RT) light emission is observed at 1.03 μm from InGaAs/GaAs QD-in-NWs which is indicative of the formation of high-quality InGaAs QD-in-NWs. Sharp emission peaks from exciton and biexciton of single In(Ga)As QD-in-NWs are observed by using μ-PL characterization at 10 K.

Original languageEnglish
Article number11PE13
JournalJapanese journal of applied physics
Volume51
Issue number11 PART2
DOIs
Publication statusPublished - 2012 Nov
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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