Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts

Takeshi Hirai, Kazuhiko Maeda, Masaaki Yoshida, Jun Kubota, Shigeru Ikeda, Michio Matsumura, Kazunari Domen

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86 Citations (Scopus)


Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga 1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

Original languageEnglish
Pages (from-to)18853-18855
Number of pages3
JournalJournal of Physical Chemistry C
Issue number51
Publication statusPublished - 2007 Dec 27
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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