Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano; Makoto Kosugi; Takashi Mimura; Masayuki Abe

doi:10.1109/EDL.1987.26691

Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano, Makoto Kosugi, Takashi Mimura, Masayuki Abe

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An I_DS of 11 mA/50 μ m, a g_m of 500 mS/mm, and an f_T of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.

Original language	English
Pages (from-to)	451-453
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1987.26691
Publication status	Published - 1987 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1987.26691

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abstract = "The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.",

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AU - Awano, Yuji

AU - Kosugi, Makoto

AU - Mimura, Takashi

AU - Abe, Masayuki

PY - 1987/10

Y1 - 1987/10

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AB - The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.

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Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

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