Abstract
We discuss specific features of Te-based compounds that made them the best materials for the phase-change data storage. It is demonstrated that the phase-change recording is due to a switch of Ge atoms between octahedral and tetrahedral symmetry positions within the Te face-centered cubic lattice. It is this nature of the transition that makes the Te-based media fast and stable. The driving force for this transition is also discussed. The chapter is concluded by introduction of a concept of the super-resolution near-field structure (super-RENS) disc that allows to reduce a bit size well below the diffraction limit and makes 100 GB/disc storage a reality.
Original language | English |
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Pages (from-to) | 7534-7537 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 515 |
Issue number | 19 SPEC. ISS. |
DOIs | |
Publication status | Published - 2007 Jul 16 |
Externally published | Yes |
Keywords
- Chalcogenides
- EXAFS
- Phase-change memories
- XANES
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry