Photo-induced structural change in a-SiO2 with undulator radiation

K. Awazu; H. Onuki; H. Imai; H. Hirashima

doi:10.1016/0368-2048(96)02924-6

Photo-induced structural change in a-SiO₂ with undulator radiation

K. Awazu, H. Onuki, H. Imai, H. Hirashima

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO₂ (a-SiO₂) caused by the irradiation of high energy photons from undulator radiation. A-SiO₂ film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm^-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO₂ was very close to that in densified a-SiO₂.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	80
DOIs	https://doi.org/10.1016/0368-2048(96)02924-6
Publication status	Published - 1996 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

Access to Document

10.1016/0368-2048(96)02924-6

Cite this

@article{636283bbe7fc404bb2a1107614099601,

title = "Photo-induced structural change in a-SiO2 with undulator radiation",

abstract = "We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.",

author = "K. Awazu and H. Onuki and H. Imai and H. Hirashima",

year = "1996",

month = may,

doi = "10.1016/0368-2048(96)02924-6",

language = "English",

volume = "80",

pages = "69--72",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

}

TY - JOUR

T1 - Photo-induced structural change in a-SiO2 with undulator radiation

AU - Awazu, K.

AU - Onuki, H.

AU - Imai, H.

AU - Hirashima, H.

PY - 1996/5

Y1 - 1996/5

N2 - We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.

AB - We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.

UR - http://www.scopus.com/inward/record.url?scp=0040157647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040157647&partnerID=8YFLogxK

U2 - 10.1016/0368-2048(96)02924-6

DO - 10.1016/0368-2048(96)02924-6

M3 - Article

AN - SCOPUS:0040157647

SN - 0368-2048

VL - 80

SP - 69

EP - 72

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

ER -

Photo-induced structural change in a-SiO₂ with undulator radiation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this