Photo-induced structural change in a-SiO2 with undulator radiation

K. Awazu, H. Onuki, H. Imai, H. Hirashima

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1 Citation (Scopus)


We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 1996 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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