TY - JOUR
T1 - Photoluminescence and photoconductance in annealed ZnO thin films
AU - Ghosh, R.
AU - Mallik, B.
AU - Fujihara, S.
AU - Basak, D.
N1 - Funding Information:
This work is financially supported by the department of Science and Technology, New Delhi vide project no: SR/FTP/PSA-07/2002. One of the authors, Mr. R. Ghosh thank CSIR for his junior research fellowship.
PY - 2005/2/25
Y1 - 2005/2/25
N2 - Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.
AB - Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.
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U2 - 10.1016/j.cplett.2005.01.043
DO - 10.1016/j.cplett.2005.01.043
M3 - Article
AN - SCOPUS:13444253869
SN - 0009-2614
VL - 403
SP - 415
EP - 419
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 4-6
ER -